IXTH110N25T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated

Trench^TM
Power MOSFETs
IXTH110N25T
IXTV110N25TS
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
V_DSS = 250V
I_D25 = 110A
≤ R_DS(on) 24mΩ
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
P_D
dv/dt
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
250
V
250
V
±20
V
±30
V
T_C = 25°C
External Lead Current Limit
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
110
75
300
25
1
694
10
-55 to +150
+150
-55 to +150
A
A
A
A
J
W
V/ns
°C
°C
°C
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
°C
260
°C
Mounting Torque (to-247)
1.13/10
Nm/lb.in.
Mounting force (PLUS220SMD)
11..65/2.5..14.6
N/lb.
TO-247
PLUS220SMD
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
250
V
3.0
5.0 V
±200 nA
5 μA
250 μA
24 mΩ
G
D
S
D (Tab)
PLUS220SMD(IXTV_S)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{High Current Handling Capability}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
© 2012 IXYS CORPORATION, All Rights Reserved
DS99904B(05/12)