IXTH10P60 Datasheet, PDF (1/2 Pages) IXYS Corporation – Standard Power MOSFET

ADVANCE TECHNICAL INFORMATION
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 10P60 _{VDSS = -600 V}
I_D25 = -10 A
R_DS(on) =
1Ω
Symbol
V
DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
P_D
T_J
T
JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_J
T_C = 25°C
T_C = 25°C
T_C = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
-600
V
-600
V
±20
V
±30
V
-10
A
-40
A
-10
A
30
mJ
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = -250 µA
V_DS = V_GS, I_D = -250 µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
V_GS = -10 V, I_D = 0.5 I_D25
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
-600
-3.0
T_J = 25°C
T_J = 125°C
V
-5.0 V
±100 nA
-25 µA
-1 mA
1.0 Ω
Applications
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2001 IXYS All rights reserved
98849 (8/01)