IXTH10N100D Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel, Depletion Mode

High Voltage
MOSFETs
IXTH10N100D
IXTT10N100D
N-Channel, Depletion Mode
V_DSX =
I_D25 =
≤ R_DS(on)
1000V
10A
1.4Ω
Symbol
V_DSX
V_DGX
V_GSX
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
10
A
20
A
400
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
4.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSX
V_GS = -10V, I_D = 250μA
V_GS(off)
V_DS = 25V, I_D = 250μA
I_GSX
V_GS = ±30V, V_DS = 0V
I_DSX(off)
V_DS = V_DSX, V_GS = -10V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 10A, Note 1
I_D(on)
V_GS = 0V, V_DS = 25V, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
-1.5
- 3.5 V
±100 nA
25 μA
500 μA
1.4 Ω
10
A
TO-268 (IXTT)
G
S
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Level Shifting
• Triggers
• Solid State Relays
• Current Regulators
• Active Load
© 2012 IXYS CORPORATION, All Rights Reserved
DS99529B(12/12)