IXTH102N20T Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
Trench^TM
Power MOSFETs
IXTQ102N20T
IXTH102N20T
V_DSS =
I_D25 =
R_DS(on) 
200V
102A
23m
N-Channel Enhancement Mode
Avalanche Rated
TO-3P (IXTQ)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25C to 175C
T_J = 25C to 175C, R_GS = 1M
Transient
T_C = 25C
Lead Current Limit, RMS
T_C = 25C, pulse width limited by T_JM
T_C = 25C
T_C = 25C
I_S  I_DM, V_DD  V_DSS, T_J  175°C
T_C = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting torque
TO-3P
TO-247
Maximum Ratings
200
V
200
V
 30
V
102
A
75
A
250
A
5
A
1.2
J
7
V/ns
750
W
-55 ... +175
175
-55 ... +175
 C
 C
 C
300
°C
260
°C
1.13 / 10
Nm/lb.in
5.5
g
6.0
g
Symbol
Test Conditions
(T_J = 25C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250A
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS =  20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150C
R_DS(on)
V_GS
=
10V,
I
D
=
0.5
•
I_D25,
Note
1
Characteristic Values
Min. Typ. Max.
200
V
2.5
4.5 V
             200 nA
5 A
250  A
18
23 m
© 2013 IXYS CORPORATION, All Rights Reserved
G
D
S
TO-247 (IXTH)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
 _{Ultra-low On Resistance}
 _{Unclamped Inductive Switching (UIS)}
rated
 _{Low package inductance}
- easy to drive and to protect
 _{175 C Operating Temperature}
Advantages
 _{Easy to mount}
 _{Space savings}
 _{High power density}
Applications
 _Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
 _{DC/DC Converters and Off-line UPS}
 _{Primary- Side Switch}
 _{High Current Switching}
Applications
DS99821A(10/13)