IXTF280N055T Datasheet, PDF (1/2 Pages) IXYS Corporation – TrenchMVTM Power MOSFET

Advance Technical Information
TrenchMV^TM
IXTF280N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
R_DS(on) ≤
55
160
4.0
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I
L
I_DM
I_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
T
SOLD
V
ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
Maximum Ratings
55
V
55
V
ISOPLUS i4-Pak^TM (5-lead) (IXTF)
± 20
V
T_C = 25°C
160
Package Current Limit, RMS (75 A per lead)
150
T_C = 25°C, pulse width limited by T_JM
600
T_C = 25°C
40
T_C = 25°C
1.5
I_S ≤ I_DM, di/dt ≤ 100 A/ms, V_DD ≤ V_DSS
3
T
J
≤
175°C,
R
G
=
3.3
Ω
T = 25°C
200
C
-55 ... +175
175
-55 ... +175
1.6 mm (0.062 in.) from case for 10 s
300
Plastic body for 10 seconds
260
50/60 Hz, t = 1 minute, I < 1 mA, RMS 2500
V
ISOL
Mounting force
20..120/4.5..25
6
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
GS
S
D
D
G = Gate
S = Source
D = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 250 μA
I
V = ± 20 V, V = 0 V
GSS
GS
DS
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
R
DS(on)
V = 10 V, I = 50 A, Notes 1, 2
GS
D
Characteristic Values
Min. Typ. Max.
55
V
2.0
4.0 V
± 200 nA
5 μA
250 μA
4.0 m Ω
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2007 IXYS CORPORATION All rights reserved
DS99686 (01/07)