IXTF1N400 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode

High Voltage
Power MOSFET
(Electrically Isolated Tab)
IXTF1N400
V_DSS
I
D25
R_DS(on)
= 4000V
= 1A
≤ 60Ω
N-Channel Enhancement Mode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
4000
V
4000
V
±20
V
±30
V
1
A
3
A
160
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
20..120 / 4.5..27
N/lb.
4000
V~
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
V_GS(th)
V_DS = V_GS, I_D = 250μA
2.0
4.0 V
I_GSS
V_GS = ±20V, V_DS = 0V
±100 nA
I_DSS
V_DS = 3.2kV, V_GS = 0V
V_DS = 4.0kV
V_DS = 3.2kV
Note 2, T_J = 100°C
50 μA
250 μA
250
μA
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
60 Ω
ISOPLUS i4-Pak^TM
1
2
5
Isolated Tab
1 = Gate
2 = Source
5 = Drain
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{4000V~ Electrical Isolation}
z _{Molding Epoxies meet UL 94 V-0}
Flammability Classification
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge Applications}
z _{Pulse Circuits}
z _{Laser and X-Ray Generation Systems}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100159D(01/12)