IXTC75N10 Datasheet, PDF (1/2 Pages) IXYS Corporation – N-Channel Enhancement Mode

ADVANCE TECHNICAL INFORMATION
MegaMOS^TMFET
N-Channel Enhancement Mode
IXTC 75N10
V = 100 V
DSS
I
= 72 A
D25
R=
DS(on)
20 mΩ
Symbol
Test Conditions
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
P_D
T
J
T_JM
T_stg
M
d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
100
V
100
V
±20
V
±30
V
72
A
300
A
230
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
2
g
300
°C
ISOPLUS 220^TM
G
D
S
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
l _{Internationalstandardpackages}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Low package inductance (< 5 nH)}
- easy to drive and to protect
l _{Fast switching times}
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
100
V_DS = V_GS, I_D = 250 µA
2
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = I_T
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4V
±100 nA
200 µA
1 mA
0.020 Ω
Applications
l _{Switch-mode and resonant-mode}
power supplies
l _{Motor controls}
l _{Uninterruptible Power Supplies (UPS)}
l _{DC choppers}
Advantages
l _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
l _{Space savings}
l _{High power density}
© 2002 IXYS All rights reserved
98881 (1/2)