IXTC280N055T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMV Power MOSFET

Preliminary Technical Information
TrenchMV^TM
IXTC280N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
R_DS(on) ≤
55
145
3.6
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
Maximum Ratings
55
V
55
V
± 20
V
T_C = 25°C
Package Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 175°C, R_G = 3.3 Ω
T_C = 25°C
145
A
75
A
600
A
40
A
1.5
J
3
V/ns
160
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I_ISOL < 1 mA, RMS
300
°C
260
°C
2500
V
Mounting force
11..65/2.5..15
N/lb.
2
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 250 μA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
R_DS(on)
V_GS = 10 V, I_D = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
55
V
2.0
4.0 V
± 200 nA
25 μA
250 μA
2.9 3.6 mΩ
ISOPLUS220 (IXTC)
E153432
G
DS
G = Gate
S = Source
Isolated back surface
D = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99629 (11/06)