IXTC200N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMV Power MOSFET

TrenchMV^TM Power
MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
IXTC200N10T
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
Maximum Ratings
100
V
100
V
± 30
V
T_C = 25°C
Lead Current Limit, RMS
101
A
75
A
T_C = 25°C, pulse width limited by T_JM
500
A
T_C = 25°C
T_C = 25°C
40
A
1.5
J
T_C = 25°C
160
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
°C
260
°C
50/60Hz, t = 1 minute, I_ISOL < 1mA, RMS
2500
Mounting force
11..65 / 2.5..14.6
V
N/lb.
ISOPLUS220
2
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
R_DS(on)
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
V_GS = 10V, I_D = 50A, Notes 1
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
±200 nA
5 μA
250 μA
6.3 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
100V
101A
6.3mΩ
ISOPLUS220
E153432
G _DS
G = Gate
S = Source
Isolated back surface
D = Drain
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
2500V electrical isolation
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99653A(10/08)