IXTB30N100L Datasheet, PDF (1/5 Pages) IXYS Corporation – Power MOSFETs with Extended FBSOA

Power MOSFETs with ^{IXTB 30N100L}
Extended FBSOA
IXTN 30N100L
N-Channel Enhancement Mode
Avalanche Rated
V_DSS = 1000 V
I_D25 = 30 A
≤ R_DS(on) 0.45 Ω
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
P
D
T_J
T_JM
T_stg
T_L
V
ISOL
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
Maximum Ratings
IXTB
IXTN
PLUS264 (IXTB)
1000
1000
V
1000
1000
V
± 30
± 30
V
± 40
± 40
V
T_C = 25°C
T_C = 25°C,
Pulse width limited by T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
T = 25°C
C
30
30
70
70
30
30
80
80
2.0
2.0
800
800
-55 ... +150
150
-55 ... +150
A
G
A
D
S
(TAB)
A miniBLOC, SOT-227 B (IXTN)
mJ
E153432
S
J
D
G
W
°C G
°C
S
°C
S
S
D
1.6 mm (0.063 in) from case for 10 s
300
50/60 Hz, RMS t = 1 min
-
I_ISOL < 1 mA
t=1s
-
Mounting torque
-
Terminal connection torque
-
Mounting force
28..150 /6.4..30
PLUS264
SOT-227B
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
-
N/lb.
10
g
30
g
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Designed for linear operation
• International standard packages
• Molding epoxies meet UL 94 V-0
flammability classification
• SOT-227B miniBLOC with aluminium
nitride isolation
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
(T_J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 250 μA
V = ± 30 V , V = 0
GS
DC DS
V_DS = V_DSS, V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 20 V, I_D = 0.5 • I_D25, Note 1
1000
3
V
5V
± 200 nA
50 μA
1 mA
0.45 Ω
Applications
• Programmable loads
• Current regulators
• DC-DC converters
• Battery chargers
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2006 IXYS All rights reserved
DS99501A(01/06)