IXTA98N075T Datasheet, PDF (1/2 Pages) IXYS Corporation – Advance Technical Information TrenchMVTM Power MOSFET

Advance Technical Information
TrenchMV^TM
Power MOSFET
IXTA98N075T
IXTP98N075T
N-Channel Enhancement Mode
V_DSS =
I_D25 =
R_DS(on) ≤
75 V
98 A
10 mΩ
Symbol
V_DSS
V_DGR
V_GSM
I
D25
I_LRMS
I_DM
dv/dt
I_AR
E
AS
P_d
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
T
C
= 25°C
Package Current Limit (RMS):
T_C = 25°C, pulse width limited by T_JM
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V
DSS
T
J
≤
175°C,
R
G
=
5
Ω
T_C = 25°C
T
C
= 25°C
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
75
V
75
V
± 20
V
98
A
75
A
280
A
5
V/ns
25
A
600
mJ
230
W
-55 ... +175
°C
175
°C
-40 ... +175
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
3.0
g
2.5
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 100 μA
I_GSS
V_GS = ±20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
150°C
R_DS(on)
V_GS = 10 V, I_D = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75
V
2.0
4.0 V
± 200 nA
2 μA
150 μA
10 mΩ
TO-263 (IXTA)
G
TAB
S
TO-220 (IXTP)
TAB
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2007 IXYS CORPORATION, All rights reserved
DS99541(04/07)