IXTA90N15T Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

Preliminary Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA90N15T
IXTH90N15T
IXTP90N15T
IXTQ90N15T
V_DSS =
I_D25 =
R_DS(on) ≤
150V
90A
20mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
T_C = 25°C *
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C =
T_C =
25°C
25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
150
150
± 30
90
75
250
4
750
10
455
-55 ... +175
175
-55 ... +175
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10 seconds
260
Mounting Torque(TO-220,TO-3P,TO-247)
1.13/10
Mounting Force (TO-263)
10..65/2.2..14.6
TO-263
2.5
TO-220
3
TO-3P
5.5
TO-247
6
V
V
V
A
A
A
A
μJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
150
V
2.5
4.5 V
± 200 nA
5 μA
250 μA
17
20 mΩ
TO-263 (IXTA)
G
S
TO-247 (IXTH)
(TAB)
TO-220 (IXTP)
(TAB)
GDS
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Uninterruptible power supplies}
© 2007 IXYS CORPORATION, All rights reserved
DS99857(08/07)