IXTA86N20T Datasheet, PDF (1/6 Pages) IXYS Corporation – Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate
Power MOSFET
IXTA 86N20T
IXTP 86N20T
IXTQ 86N20T
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
200
86
29
V
A
mΩ
Symbol
Test Conditions
Maximum Ratings ^{TO-263 (IXTA)}
V
DSS
V_DGR
V_GSM
I_D25
I_L
I
DM
I_AS
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
200
V
200
V
± 30
V
T_C = 25°C*
Lead Current Limit, RMS
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C =
T_C =
25°C
25°C
86
A
75
A
260
A
10
A
1.0
J
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 3.3 Ω
T_C = 25°C
3
V/ns
480
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
°C
260
°C
Mounting Torque
Mounting Force
(TO-220, TO-3P) 1.13 / 10 Nm/ lb.in.
(TO-263)
10...65/2..5..15 N/lb.
TO-263
2
g
TO-220
3
g
TO-3P
5.5
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 1 mA
3.0
5.0 V
I_GSS
V_GS = ± 20 V, V_DS = 0 V
± 200 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°C
1 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
29 mΩ
G
S
TO-220 (IXTP)
(TAB)
G _DS
TO-3P (IXTQ)
(TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99664(08/06)