IXTA62N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT Power MOSFET

PolarHT^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 62N15P
IXTP 62N15P
IXTQ 62N15P
V=
DSS
I_D25 =
≤ R_DS(on)
150
62
40
V
A
mΩ
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
T_SOLD
Md
Weight
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I
S
≤
I,
DM
di/dt
≤ 100
A/µs,
V
DD
≤
V,
DSS
T
J
≤150° C,
R
G
=
10
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
150
V
150
V
G
S
±20
V
±30
V
TO-220 (IXTP)
62
A
150
A
50
A
30
mJ
G _DS
1.0
J
TO-3P (IXTQ)
10
V/ns
(TAB)
(TAB)
350
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
2600
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
G
D
S
G = Gate
S = Source
Features
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
3.0
5.5 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
33
40 m Ω
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99154E(12/05)