IXTA5N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 5N60P
IXTP 5N60P
V_DSS = 600 V
I_D25
=
5A
R_DS(on) ≤ 1.7 Ω
Symbol
V
DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
Weight
Test Conditions
T
J
= 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 18 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600
V
600
V
TO-263 (IXTA)
± 30
V
± 40
V
G
S
5
A
10
A TO-220 (IXTP)
5
A
20
mJ
360
mJ
10
V/ns
G _DS
(TAB)
(TAB)
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
G = Gate
S = Source
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
3
g
Features
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
600
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
50μA
3.0
5.5 V
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 125°C
5 μA
50 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.7 Ω
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99426E(04/06)