IXTA5N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET - N-Channel Enhancement Mode

Advance Technical Information
PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P
IXTP 5N50P
IXTY 5N50P
V_DSS = 500 V
I_D25 = 4.8 A
R_DS(on) ≤ 1.4 Ω
Symbol
V
DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 20 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
4.8
A
10
A
5
A
20
mJ
250
mJ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
10
V/ns
G _DS
89
-55 ... +150
150
-55 ... +150
300
260
W
°C ^{TO-252 (IXTY)}
°C
°C
G
°C
°C
S
(TAB)
(TAB)
(TAB)
M_d
Weight
Mounting torque
TO-220
TO-263
TO-252
(TO-220)
1.13/10 Nm/lb.in.
4
g
3
g
0.8
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 50μA
3.0
5.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
5 μA
50 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.4 Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99446(08/05)