IXTA50N25T Datasheet, PDF (1/6 Pages) IXYS Corporation – Trench Gate Power MOSFET N-Channel Enhancement Mode

Trench Gate
Power MOSFET
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
N-Channel Enhancement Mode
V_DSS =
I_D25 =
R_DS(on) ≤
250V
50A
60mΩ
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
D (Tab)
GD _S
D (Tab)
Symbol
V_DSS
V_DGR
V
GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Transient
Maximum Ratings
250
V
250
V
± 30
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
50
A
130
A
T_C = 25°C
T_C = 25°C
5
A
1.5
J
T_C = 25°C
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 s
300
°C
260
°C
Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10
Mounting Force (TO-263)
10..65 / 2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ . Max.
250
V
3.0
5.0 V
± 100 nA
1 μA
150 μA
60 mΩ
G
D
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{Avalanche Rated}
z _{High Current Handling Capability}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on)}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Coverters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC and DC Motor Drives}
z _{Uninterrupted Power Supplies}
z _{High Speed Power Switching}
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99346B(01/10)