IXTA4N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA4N60P
IXTP4N60P
IXTU4N60P
IXTY4N60P
V = 600 V
DSS
I_D25 =
4A
≤ R_DS(on) 2.0 Ω
TO-263 (IXTA)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
=
25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 30 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600
V
600
V
±30
V
±40
V
G
S
TO-220 (IXTP)
4
A
10
A
4
A
G _DS
15
mJ _{TO-251 (IXTU)}
150
mJ
10
V/ns
89
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
3
g
G
D
S
TO-252 (IXTY)
G
S
(TAB)
(TAB)
(TAB)
(TAB)
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
V_GS(th)
V_DS = V_GS, I_D = 100μA
I_GSS
V_GS = ±30 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
±100 nA
1 μA
50 μA
2.0 Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99423E(04/06)