IXTA42N25P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

PolarHT^TM
Power MOSFET
IXTA 42N25P
IXTP 42N25P
IXTQ 42N25P
V_DSS =
I_D25 =
≤ R_DS(on)
250
42
84
V
A
mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T
J
=
25°
C
to
150°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T
C
= 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 10 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
Maximum Ratings
250
V
250
V
±20
V
±30
V
42
A
110
A
42
A
30
mJ
1.0
J
10
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
250
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
3.0
5.5 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
84 m Ω
G
S
TO-220 (IXTP)
(TAB)
G _DS
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99157E(12/05)