IXTA3N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHVTM Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
V = 600 V
DSS
I_D25 = 3.0 A
R_DS(on) ≤ 2.9 Ω
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T_SOLD
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T_J ≤150° C, R_G = 30 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-220
TO-263
TO-252
Maximum Ratings _{TO-263 (IXTA)}
600
V
600
V
± 30
V
± 40
V
G
S
3.0
A
6
A ^{TO-220 (IXTP)}
3
A
10
mJ
100
mJ
(TAB)
5
70
-55 ... +150
150
-55 ... +150
300
260
4
3
0.35
V/ns
W
°C
°C
°C
°C
°C
g
g
g
G
DS
TO-252 (IXTY)
G
S
G = Gate
S = Source
(TAB)
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 50 µA
3.0
5.5 V
I_GSS
V_GS = ± 30 V_DC, V_DS = 0
± 100 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
5 µA
50 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
2.9 Ω
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99449E(04/06)