IXTA3N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage Power MOSFETs

High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
IXTA/IXTP 3N120
IXTA/IXTP 3N110
V_DSS
I_D25
1200 V 3 A
1100 V 3 A
R_DS(on)
4.5 Ω
4.0 Ω
Symbol
V
DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E
AS
dv/dt
P
D
T
J
T
JM
T_stg
T_L
M
d
Weight
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
3N120
1200
V
3N110
1100
V
T_J = 25°C to 150°C; R_GS = 1 MΩ 3N120
1200
V
3N110
1100
V
Continuous
Transient
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
3
A
12
A
3
A
20
mJ
700
mJ
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
5
150
-55 to +150
150
-55 to +150
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
°C
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
TO-220
TO-263
4
g
2
g
TO-220 (IXTP)
GDS
TO-263 (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Low R}
DS (on)
l _{Rated for unclamped Inductive load}
Switching (UIS)
l _{Molding epoxies meet UL 94 V-0}
flammability classification
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
3N120
3N110
1200
1100
2.5
V
V
4.5 V
±100 nA
T_J = 25°C
T_J = 125°C
3N120
3N110
25 µA
1 mA
4.5 Ω
4.0 Ω
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2001 IXYS All rights reserved
98844A (11/01)