IXTA32N20T Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench^TM
Power MOSFET
IXTA32N20T
IXTP32N20T
V_DSS = 200V
I_D25 = 32A
R_DS(on) ≤ 78mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
200
V
200
V
±20
V
±30
V
32
A
64
A
16
A
250
mJ
10
V/ns
200
W
- 55 ... +175
°C
175
°C
- 55 ... +175
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
200
V
3.0
5.0 V
±100 nA
3 μA
200 μA
78 mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD _S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{175°C Operating Temperature}
z _{Avalanche Rated}
z _{Low RDS(on)}
z _{Fast Intrinsic Rectifier}
z _{High Current Handling Capability}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99959B(10/10)