IXTA2R4N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Polar ^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2R4N120P
IXTH2R4N120P
IXTP2R4N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque (TO-220, TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
2.4
A
6
A
2.4
A
200
mJ
10
125
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
2.5
4.5 V
±50 nA
5 μA
300 μA
6.5 7.5 Ω
© 2008 IXYS CORPORATION, All rights reserved
V_DSS =
I_D25 =
≤ R_DS(on)
1200V
2.4A
7.5Ω
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
G _DS
TO-247 (IXTH)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching}
(UIS) rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications:
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power Applications}
z _{High Voltage Discharge circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
DS99873A (04/08)