IXTA2N80 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage MOSFET

Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 2N80
IXTP 2N80
V_DSS = 800 V
I_D25 =
= R_DS(on)
2A
6.2 Ω
Symbol
Test Conditions
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
M_d
Weight
T
C
= 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 18 Ω
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
Maximum Ratings
800
V
800
V
±20
V
±30
V
2
A
8
A
2
A
6
mJ
200
mJ
5
V/ns
54
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
4
g
300
°C
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
800
V
2.5
5.5 V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = V_DSS
V =0V
GS
T
J
=
125°C
25 µA
500 µA
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
6.2 Ω
TO-220AB (IXTP)
GDS
D (TAB)
TO-263 AA (IXTA)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Ÿ International standard packages
Ÿ
Low
R
DS
(on)
HDMOS^TM
process
Ÿ Rugged polysilicon gate cell structure
Ÿ Low package inductance (< 5 nH)
- easy to drive and to protect
Ÿ Fast switching times
Applications
Ÿ Switch-mode and resonant-mode
power supplies
Ÿ Flyback inverters
Ÿ DC choppers
Advantages
Ÿ Space savings
Ÿ High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98541A 03/24/00
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