IXTA1R4N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode

Polar^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTY1R4N120P
IXTA1R4N120P
IXTP1R4N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
1.4
A
3.0
A
1.4
A
150
mJ
10
V/ns
86
W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
0.35
2.50
3.00
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 100μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
1200
V
2.5
4.5 V
±50 nA
5 μA
300 μA
10.5 13 Ω
V_DSS = 1200V
I_D25 = 1.4A
R_DS(on) ≤ 13Ω
TO-252 (IXTY)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD _S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low Q_G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
© 2012 IXYS CORPORATION, All Rights Reserved
DS99871B(06/12)