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IXTA1N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage MOSFET | |||
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High Voltage
MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Advanced Technical Information
IXTA 1N100
IXTP 1N100
VDSS = 1000 V
I=
D25
= RDS(on)
1.5 A
11 â¦
Symbol
Test Conditions
VDSS
VDGR
V
GS
VGSM
ID25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
T
stg
Md
Weight
TC = 25°C
T
C
= 25°C
IS ⤠IDM, di/dt ⤠100 A/µs, VDD ⤠VDSS,
TJ ⤠150°C, RG = 18 â¦
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
1.5
A
6
A
1.5
A
6
mJ
200
mJ
3
V/ns
54
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
4
g
300
°C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 25 µA
1000
2.5
V
4.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
VGS = 10 V, ID = 1.0A
Pulse test, t ⤠300 µs, duty cycle d ⤠2 %
11 â¦
TO-220AB (IXTP)
GDS
D (TAB)
TO-263 AA (IXTA)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
 International standard packages
 High voltage, Low RDS (on) HDMOSTM
process
 Rugged polysilicon gate cell structure
 Fast switching times
Applications
 Switch-mode and resonant-mode
power supplies
 Flyback inverters
 DC choppers
 High frequency matching
Advantages
 Space savings
 High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98545A (11/99)
1-2
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