IXTA180N10T7 Datasheet, PDF (1/5 Pages) IXYS Corporation – PreliminaryTechnical Information TrenchMVTM Power MOSFET

PreliminaryTechnical Information
TrenchMV^TM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
100
180
6.4
V
A
mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I
LRMS
I_DM
I_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
Weight
Test Conditions
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Transient
T_C = 25° C
Package Current Limit, RMS
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T_J ≤175° C, R_G =3.3 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings _{TO-263 (7-lead) (IXTA..7)}
100
V
100
V
± 30
180
120
450
25
750
3
V
A
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
480
-55 ... +175
175
-55 ... +175
300
260
3
W ^Features
Ultra-low On Resistance
°C _{Unclamped Inductive Switching (UIS)}
°C _rated
°C _{Low package inductance}
°C ^{- easy to drive and to protect}
°C ^{175 ° C Operating Temperature}
g Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 250 µA
2.5
4.5 V
I_GSS
V_GS = ± 20 V, V_DS = 0 V
± 200 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 150° C
5 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 25 A, Note 1
5.4
6.4 m Ω
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99711 (11/06)