IXTA140P05T Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchP Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

TrenchP^TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA140P05T
IXTP140P05T
IXTH140P05T
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
- 50
V
- 50
V
±15
V
±25
V
-140
A
-120
A
- 420
A
- 70
A
1
J
298
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = - 250μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ± 15V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
- 50
V
- 2.0
- 4.0 V
±100 nA
-10 μA
- 750 μA
9 mΩ
© 2013 IXYS CORPORATION, All Rights Reserved
V_DSS =
I_D25 =
≤ R_DS(on)
- 50V
- 140A
9mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD _S
TO-247 (IXTH)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Extended FBSOA}
z _{Fast Intrinsic Diode}
z _{Low RDS(ON) and QG}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High-Side Switching}
z _{Push Pull Amplifiers}
z _{DC Choppers}
z _{Automatic Test Equipment}
z _{Current Regulators}
z _{Battery Charger Applications}
DS100027C(01/13)