IXTA100N04T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information TrenchT2TM Power MOSFET

Preliminary Technical Information
TrenchT2^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA100N04T2
IXTP100N04T2
V_DSS = 40V
I_D25 = 100A
R_DS(on) ≤ 7mΩ
TO-263 (IXTA)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
R_DS(on)
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
V_GS = 10V, I_D = 25A, Notes 1, 2
Maximum Ratings
40
V
40
V
± 20
V
100
A
75
A
300
A
50
A
300
mJ
150
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
2.5
g
3.0
g
Characteristic Values
Min. Typ. Max.
40
V
2.0
4.0 V
±100 nA
2 μA
50 μA
7 mΩ
G
S
TO-220 (IXTP)
(TAB)
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
z _{175°C Operating Temperature}
z _{High current handling capability}
z _{ROHS Compliant}
z _{High performance Trench}
Technology for extremely low R_DS(on)
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
z _Synchronous
Applications
• Synchronous Buck Converters
• High Current Switching Power
Supplies
• Battery Powered Electric Motors
• Resonant-mode power supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
© 2008 IXYS CORPORATION, All rights reserved
DS99972(4/08)