IXTA06N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET

Polar^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA06N120P
IXTP06N120P
V_DSS =
I_D25 =
≤ R_DS(on)
1200V
0.6A
34Ω
TO-263 (IXTA)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
0.6
A
1.2
A
0.6
A
50
mJ
10
V/ns
42
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
2.5
3.0
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 50μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
2.0
4.0 V
±50 nA
3 μA
125 μA
27
34 Ω
G
S
TO-220 (IXTP)
D (TAB)
G _DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High Voltage Switched-Mode and}
Resonant-ModePower Supplies
z _{High Voltage Pulse Power}
Applications
z _{High Voltage Discharge Circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC Converters}
z _{High Voltage DC-AC Inverters}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99872C(07/09)