IXTA05N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage MOSFET

High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 05N100
IXTP 05N100
V_DSS
I_D25
R_DS(on)
= 1000 V
= 750 mA
= 17 Ω
Symbol
Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
M_d
Weight
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 47 Ω
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
750
mA
3
A
1.0
A
5
mJ
100
mJ
3
V/ns
40
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
4
g
300
°C
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 25 µA
1000
2.5
V
4.5 V
V_GS = ±30 V_DC, V_DS = 0
±100 nA
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
500 µA
V_GS = 10 V, I_D = 375 mA
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
15
17 Ω
TO-220AB (IXTP)
GDS
TO-263 AA (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
y International standard packages
y High voltage, Low R_{DS (on)} HDMOS^TM
process
y Rugged polysilicon gate cell structure
y Fast switching times
Applications
y Switch-mode and resonant-mode
power supplies
y Flyback inverters
y DC choppers
y High frequency matching
Advantages
y Space savings
y High power density
© 2004 IXYS All rights reserved
DS98736B(10/04)