IXTA02N450HV Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage Power MOSFETs

High Voltage
Power MOSFETs
Advance Technical Information
IXTA02N450HV
IXTT02N450HV
V_DSS
I
D25
R_DS(on)
= 4500V
= 200mA
≤ 750Ω
N-Channel Enhancement Mode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
Maximum Ratings
4500
V
4500
V
±20
V
±30
V
200
mA
600
mA
113
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
°C
260
°C
Mounting Force (TO-263)
10..65 / 22..14.6
N/lb
TO-263
TO-268
2.5
g
4.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = 3.6kV, V_GS = 0V
V_DS = 4.5kV
V_DS = 3.6kV
T_J = 100°C
R_DS(on)
V_GS = 10V, I_D = 10mA, Note 1
Characteristic Values
Min. Typ. Max.
4.0
6.5 V
±100 nA
5 μA
10 μA
25
μA
750 Ω
TO-263 (IXTA)
G
S
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{High Blocking Voltage}
z _{High Voltage Packages}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge Applications}
z _{Pulse Circuits}
z _{Laser and X-Ray Generation Systems}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100498(10/12)