IXSX50N60AU1 Datasheet, PDF (1/5 Pages) IXYS Corporation – IGBT with Diode Combi Pack - Short Circuit SOA Capability

Preliminary data
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXSX50N60AU1
IXSX50N60AU1S
V_CES = 600 V
I
= 75 A
C25
V_CE(sat) = 2.7 V
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I
C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T
C
= 25°C, limited by leads
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 22 Ω
Clamped inductive load, L = 30 µH
t_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
Weight
V_GE = 15 V, V_CE = 360 V, T_J = 125°C
R
G
=
22
Ω,
non
repetitive
T_C = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I_CM = 100
A
@ 0.8 V_CES
10
µs
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
6
g
300
°C
G
E
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l _{Hole-less TO-247 package for clip}
mounting
l _{High current rating}
l _{Guaranteed Short Circuit SOA}
capability
l _{High frequency IGBT and anti-}
parallel FRED in one package
l _{Low V}
CE(sat)
- for minimum on-state conduction
losses
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast Recovery Epitaxial Diode (FRED)}
- soft recovery with low I_RM
Symbol
BV_CES
V_GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
I_C = 3 mA, V_GE = 0 V
I_C = 4 mA, V_CE = V_GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
4
T
J
=
25°C
T_J = 125°C
V
8V
750 µA
15 mA
±100 nA
2.7 V
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{High power density}
© 1997 IXYS All rights reserved
97512 (5/97)