IXST15N120B Datasheet, PDF (1/2 Pages) IXYS Corporation – HIGH Voltage IGBT

HIGH Voltage IGBT
IXSH 15N120B
IXST 15N120B
"S" Series - Improved SCSOA Capability
I_C25
V_CES
V_CE(sat)
= 30 A
= 1200 V
= 3.4 V
Preliminary data
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
1200
V
1200
V
V
GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
30
A
15
A
60
A
SSOA
(RBSOA)
V=
GE
15
V,
T
J
=
125°C,
R
G
=
10
W
Clamped inductive load
I = 40
A
CM
@ 0.8 V_CES
t_SC
T_J = 125°C, V_GE = 720 V; V_GE = 15 V, R_G = 10 W
10
ms
Non repetitive
P_C
T_C = 25°C
T
J
T_JM
T
stg
M_d
Mounting torque
(TO-247)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268)
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
260
°C
Weight
TO-247
TO-268
6
g
4
g
Symbol
BV_CES
V
GE(th)
I_CES
I
GES
V
CE(sat)
Test Conditions
I_C = 1.0 mA, V_GE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
V_CE = 0.8 • V_CES
Note 1
V
CE
=
0
V,
V
GE
=
±20
V
I = I V = 15 V
C C90, GE
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 125°C
T_J = 125°C
1200
3
V
6V
50 mA
2.5 mA
±100 nA
3.0 3.4 V
2.8
V
TO-247 AD (IXSH)
G
C
E
TO-268 (IXST)
G
E
(TAB)
(TAB)
Features
• High Blocking Voltage
• Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
• MOS gate turn-on for drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98652A (7/00)
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