IXSR40N60CD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode ISOPLUS247

IGBT with Diode
ISOPLUS247^TM
IXSR 40N60CD1
(Electrically Isolated Backside)
Short Circuit SOA Capability
V_CES
I_C25
V_CE(SAT)
t_fi(typ)
= 600 V
= 62 A
= 2.5 V
= 70 ns
Preliminary data
Symbol
Test Conditions
V_CES
V
CGR
V_GES
V_GEM
I
C25
I_C90
I
CM
SSOA
(RBSOA)
t_SC
(SCSOA)
P_C
T_J
T_JM
T
stg
V_ISOL
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
T
C
= 25°C, limited by leads
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 22 W
Clamped inductive load, L = 30 mH
V_GE= 15 V, V_CE = 360 V, T_J = 125°C
R_G = 22 W, non repetitive
T_C = 25°C
50/60 Hz, RMS t = 1 min
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
PLUS247
Maximum Ratings
600
V
600
V
±20
V
±30
V
62
A
37
A
150
A
I_CM = 80
A
@ 0.8 V
CES
10
ms
210
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
300
°C
5
g
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V
CE(sat)
Test Conditions
I_C = 1 mA, V_GE = 0 V
I = 4 mA, V = V
C
CE
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I = I , V = 15 V
C
T GE
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
4
T_J = 150°C
V
7V
650 mA
5 mA
±100 nA
2.5 V
ISOPLUS 247^TM (IXSR)
E 153432
G
C
E
Isolated backside*
G = Gate,
E = Emitter
C = Collector,
* Patent pending
Features
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• High current handling capability
• Latest generation HDMOS^TM process
• MOS Gate turn-on
- drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Easy assembly
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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