English
Language : 

IXSR40N60BD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
Advanced Technical Information
IGBT with Diode
IXSR 40N60BD1
ISOPLUS 247TM
(Electrically Isolated Backside)
Short Circuit SOA Capability
V
CES
I
C25
VCE(sat)
tfi(typ)
= 600 V
= 70 A
= 2.2 V
= 120 ns
Symbol
Test Conditions
V
CES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
Tstg
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
VGE= 15 V, VCE = 360 V, TJ = 125°C
R
G
=
22
W,
non
repetitive
TC = 25°C
VISOL
50/60 Hz, RMS t = 1 min leads-to housing
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Maximum Ratings
600
V
600
V
±20
V
±30
V
70
A
40
A
150
A
ICM = 80
A
@ 0.8 VCES
10
ms
170
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
300
°C
5
g
ISOPLUS 247TM
E 153432
G
CE
Isolated backside*
G = Gate,
E = Emitter
C = Collector,
* Patent pending
Features
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 1 mA, VGE = 0 V
IC = 4 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IT, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25°C
TJ = 150°C
V
7V
650 mA
5 mA
±100 nA
2.2 V
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Easy assembly
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98672 (07/00)
1-2