IXSR35N120BD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

IGBT with Diode
IXSR 35N120BD1
ISOPLUS 247^TM
(Electrically Isolated Backside)
Short Circuit SOA Capability
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 1200 V
= 70 A
= 3.6 V
= 180 ns
Symbol
Test Conditions
Maximum Ratings
V
CES
V_CGR
V
GES
V_GEM
I_C25
I
C90
I_CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P_C
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
90°C
T_C = 25°C, 1 ms
V=
GE
15
V,
T
VJ
=
125°C,
R
G
=
22
Ω
Clamped inductive load, L = 30 µH
V=
GE
15
V,
V
CE
=
720
V,
T
J
=
125°C
R_G = 22 Ω, non repetitive
T_C = 25°C
IGBT
Diode
1200
V
1200
V
±20
V
±30
V
70
A
30
A
140
A
I = 90
A
CM
@ 0.8 V_CES
10
µs
250
W
150
W
T_J
-55 ... +150
°C
T_JM
150
°C
T
stg
-55 ... +150
°C
V_ISOL
50/60 Hz, RMS t = 1 min leads-to housing
2500
V~
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
BV_CES
V
GE(th)
I_CES
I_GES
V
CE(sat)
I_C = 3 mA, V_GE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I
C
=
I_T,
V
GE
=
15
V
1200
3
T_J = 25°C
T_J = 150°C
V
6V
1 mA
3 mA
±100 nA
3.6 V
c Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
© 2002 IXYS All rights reserved
ISOPLUS 247^TM
E 153432
G
C
E
Isolated backside*
G = Gate,
E = Emitter
C = Collector,
* Patent pending
Features
z _{DCB Isolated mounting tab}
z _{Meets TO-247AD package outline}
z _{High current handling capability}
z _{Latest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{Easy assembly}
z _{High power density}
98741A (01/02)