IXSN80N60BD1 Datasheet, PDF (1/6 Pages) IXYS Corporation – IGBT with Diode Short Circuit SOA Capability

IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1
C
V_CES
I_C25
V_CE(sat)
t_fi
= 600 V
= 160 A
= 2.5 V
= 180 ns
G
Preliminary Data Sheet
Symbol Test Conditions
V _CES
V _CGR
V _GES
V_GEM
I_C25
I_L
I_C90
I _CM
SSOA
(RBSOA)
t_SC
(SCSOA)
P_C
V _ISOL
T_J
T _JM
T _stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C (Silicon chip capability)
Lead current limit (RMS)
T_C = 90°C
T_C = 25°C, 1 ms
CV^Gla^Em= p1e5dVi,nTd^Vu^Jc=tiv1e25lo^{°Cad, RG = 5 Ω}
RV^GGE==
15
22
V,
Ω,
nVo^Cn^E
=re3p6e0titViv,eT_J
=
125°C
T_C = 25°C
50/60 Hz
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
E
E
Maximum Ratings
600
V
600
A
±20
V
±30
V
160
A
100
A
80
A
300
A
@I^C0^M.8=
160
V_CES
A
10
µs
420
W
2500
V~
3000
V~
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.4/6 Nm/lb.in.
30
g
Symbol
B V _CES
V _GE(th)
I _CES
I _GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 500 µA, V_GE = 0 V
I_C = 8 mA, V_CE = V_GE
VV_GCEE
=
=
0V^CV^ES
TT_JJ
=
=
25°C
125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V; Note 1
600
4
V
8V
200 µA
2 mA
±200 nA
2.5 V
miniBLOC, SOT-227 B
E153432 _E
G
E = Emitter c,
G = Gate,
E
C
C = Collector
E = Emitter c
c Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{International standard package}
z _{Aluminium-nitride isolation}
- high power dissipation
z _{Isolation voltage 3000 V~}
z _{UL registered E 153432}
z _{Low VCE(sat)}
- for minimum on-state conduction
losses
z _{Fast Recovery Epitaxial Diode}
- short t_rr and I_RM
z _{Low collector-to-case capacitance}
(< 60 pF)
- reduced RFI
z _{Low package inductance (< 10 nH)}
- easy to drive and to protect
Applications
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switch-mode and resonant-mode}
power supplies
Advantages
z _{Space savings}
z _{Easy to mount with 2 screws}
z _{High power density}
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
DS98890A(05/04)