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IXSN55N120AU1 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage IGBT with Diode - Short Circuit SOA Capability
High Voltage
IGBT with Diode
Short Circuit SOA Capability
IXSN 55N120AU1
3
VCES = 1200 V
IC25
= 110 A
VCE(sat) =
4V
Preliminary data
Symbol
Test Conditions
2
4
1
Maximum Ratings
miniBLOC, SOT-227 B
VCES
V
CGR
V
GES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
P
C
PD
VISOL
TJ
TJM
Tstg
Md
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C
R
G
=
22
W,
non
repetitive
T
C
= 25°C
IGBT
Diode
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
1200
V
1200
A
±20
V
±30
V
1
2
110
A
55
A
160
A
4
3
ICM = 110
A
@ 0.8 VCES
10
ms
500
W
175
W
2500
V~
3000
V~
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Features
• International standard package
miniBLOC (ISOTOP) compatible
• Aluminium-nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Low VCE(sat)
- for minimum on-state conduction
losses
• Fast Recovery Epitaxial Diode
- short t and I
rr
RM
• Low collector-to-case capacitance
(< 60 pF)
- reduces RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
Symbol
BVCES
V
GE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
IC = 8 mA, VGE = 0 V
I = 8 mA, V = V
C
CE
GE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C
C90 GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
4
V
8V
TJ = 25°C
TJ = 125°C
1 mA
16 mA
±200 nA
4V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92520E(12/96)
1-2
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