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| IXSK40N60CD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode | |||
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IGBT with Diode
PLUS247TM package
Short Circuit SOA Capability
Preliminary data
IXSK 40N60CD1
IXSX 40N60CD1
VCES =
IC25
=
VCE(sat) =
tfi(typ)
=
600 V
75 A
2.5 V
70 ns
Symbol
Test Conditions
V
CES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C, limited by leads
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
R
G
=
22
W,
non
repetitive
PC
TC = 25°C
TJ
TJM
Tstg
Md
Mounting torque (TO-264)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-264
PLUS247
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
40
A
150
A
ICM = 80
A
@ 0.8 VCES
10
ms
280
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.9/6 Nm/lb.in.
300
°C
10
g
6
g
Symbol
BV
CES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
I = 1 mA, V = 0 V
C
GE
IC = 4 mA, VCE = VGE
VCE = 0.8 ⢠VCES
V =0V
GE
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25°C
T
J
=
150°C
V
7V
650 mA
5 mA
±100 nA
2.5 V
PLUS 247TM
(IXSX)
G
C
E
TO-264 AA
(IXSK)
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
⢠International standard packages
⢠Guaranteed Short Circuit SOA
capability
⢠High frequency IGBT and anti-
parallel FRED in one package
⢠Latest generation HDMOSTM process
⢠MOS Gate turn-on
- drive simplicity
⢠Fast Recovery,low leakageEpitaxial
Diode
- soft recovery with low IRM
Applications
⢠AC motor speed control
⢠DC servo and robot drives
⢠DC choppers
⢠Uninterruptible power supplies (UPS)
⢠Switch-mode and resonant-mode
power supplies
Advantages
⢠PLUS 247TMpackage for clip or spring
mounting
⢠Space savings (two devices in one
package)
⢠Reduces assembly time and cost
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98574A (7/00)
1-2
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