IXSK35N120BD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – HIGH VOLTAGE IGBT WITH DIODE

High Voltage
IGBT with Diode
Short Circuit SOA Capability
IXSK 35N120BD1
IXSX 35N120BD1
V_CES = 1200 V
I_C25
= 70 A
V_CE(SAT) = 3.6 V
Preliminary data sheet
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
t_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_J = 125°C, R_G = 5 W
Clamped inductive load
V_GE = 15 V, V_CE = 720 V, T_J = 125°C
R_G = 5 W, non repetitive
T_C = 25°C
IGBT
Diode
1.6 mm (0.063 in) from case for 10 s
TO-264
PLUS247
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
70
A
35
A
140
A
I_CM = 90
A
@ 0.8 V_CES
10
ms
300
W
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
10
g
6
g
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
BV_CES
V_GE(th)
I_CES

I_GES
V_CE(sat)
I_C = 3 mA, V_GE = 0 V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
1200
3
T_J = 125°C
V
6V
1 mA
3 mA
±100 nA
3.6 V
 Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
TO-264 AA
(IXSK)
G
C
E
PLUS TO-247^TM
(IXSX)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• Hole-less TO-247 package for clip
mounting
• High frequency IGBT and anti-parallel
FRED in one package
• Low V_CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I_RM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
98733 (7/00)