IXSH50N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – Short Circuit SOA Capability

IGBT High Speed
Short Circuit SOA Capability
mêÉäáãáå~êó=Ç~í~=ëÜÉÉí
IXSH 50N60B
V<sub>`bp</sub>
I
`OR
V<sub>`bEë~íF</sub>
= 600 V
= 75 A
= 2.5 V
Symbol
V
CES
V<sub>CGR</sub>
V<sub>GES</sub>
V<sub>GEM</sub>
I<sub>C25</sub>
I
C90
I<sub>CM</sub>
SSOA
(RBSOA)
t<sub>SC</sub>
(SCSOA)
P<sub>C</sub>
T<sub>J</sub>
T<sub>JM</sub>
T<sub>stg</sub>
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T<sub>J</sub> = 25°C to 150°C; R<sub>GE</sub> = 1 MΩ
Continuous
Transient
T<sub>C</sub> = 25°C, limited by leads
T
C
= 90°C
T<sub>C</sub> = 25°C, 1 ms
V<sub>GE</sub> = 15 V, T<sub>VJ</sub> = 125°C, R<sub>G</sub> = 22 Ω
Clamped inductive load, L = 30 µH
V<sub>GE</sub> = 15 V, V<sub>CE</sub> = 360 V, T<sub>J</sub> = 125°C
R<sub>G</sub> = 22 Ω, non repetitive
T<sub>C</sub> = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I<sub>CM</sub> = 100
A
@ 0.8 V
CES
10
µs
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-247 SMD 4
g
TO-247
6
g
300
°C
TO-247 AD
G
C
E
`=Eq^_F
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard package
JEDEC TO-247 AD, and
TO-247 SMD for surface mount
Guaranteed Short Circuit SOA
capability
High frequency IGBT
Latest generation HDMOS^TM process
Low V_CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
Symbol
BV_CES
V_GE(th)
I_CES
I
GES
V
CE(sat)
Test Conditions
I_C = 250 µA, V_GE = 0 V
I_C = 4 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I = I ; V = 15 V
C
C90 GE
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
4
T_J = 25°C
T_J = 125°C
V
8V
200 µA
1 mA
±100 nA
2.2 2.5 V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
«= NVVV= fuvp= ^ää= êáÖÜíë= êÉëÉêîÉÇ
VTROQ_= EQLVVF