IXSH45N120B Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage IGBT S Series - Improved SCSOA Capability

High Voltage IGBT
IXSH 45N120B
IXST 45N120B
"S" Series - Improved SCSOA Capability
I_C25
V_CES
V_CE(sat)
= 75 A
= 1200 V
= 3.0 V
Preliminary data
Symbol
V
CES
V_CGR
V_GES
V_GEM
I_C25
I
C90
I_CM
SSOA
(RBSOA)
t_SC
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C (limited by leads)
T
C
= 90°C
T_C = 25°C, 1 ms
75
A
45
A
180
A
V_GE= 15 V, T_J = 125°C, R_G = 5 W
Clamped inductive load
I_CM = 90
A
@ 0.8 V
CES
T_J = 125°C, V_GE = 720 V; V_GE = 15 V, R_G = 5 W
10
ms
P_C
T_C = 25°C
T_J
T_JM
T_stg
M
Mounting torque
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
(TO-247)
TO-247
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
6
g
Symbol
BV
CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I = 1.0 mA, V = 0 V
C
GE
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
Note 1
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 125°C
T_J = 125°C
1200
3
V
6V
50 mA
2.5 mA
±100 nA
2.5 3.0 V
2.6
V
TO-247 AD (IXSH)
G
C
E
TO-268 ( IXST)
(TAB)
G
E
(TAB)
G = Gate
S = Emitter
C = Collector
TAB = Collector
Features
• Epitaxial Silicon drift region
- fast switching
- small tail current
• MOS gate turn-on for drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Welding
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98713A (7/00)
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