IXSH45N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage, Low VCE(sat) IGBT

High Voltage,
Low V_CE(sat) IGBT
Short Circuit SOA Capability
IXSH 45N120
V_CES
I_C25
V_CE(sat)
= 1200 V
= 75 A
= 3V
Symbol
Test Conditions
V
CES
V_CGR
V_GES
V_GEM
I_C25
I
C90
I_CM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C, limited by leads
T
C
= 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_J = 125°C, R_G = 2.7 W
Clamped inductive load, L = 30 mH
t_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
M
d
Weight
V_GE= 15 V, V_CE = 0.6 • V_CES, T_J = 125°C
R_G = 22 W, non repetitive
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
75
A
45
A
180
A
I_CM = 90
A
@ 0.8 V
CES
10
ms
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BV
CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Test Conditions
I = 3 mA, V = 0 V
C
GE
I_C = 4 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1200
46
V
8V
T_J = 25°C
T_J = 125°C
400 mA
1.2 mA
±100 nA
3V
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
q _{International standard package}
JEDEC TO-247
q _{High frequency IGBT with guaranteed}
Short Circuit SOA capability
q _{Fast Fall Time for switching speeds}
up to 20 kHz
q _{2nd generation HDMOS}TM _process
q _{Low V}
CE(sat)
- for minimum on-state conduction
losses
q _{MOS Gate turn-on}
- drive simplicity
Applications
q _{AC motor speed control}
q _{DC servo and robot drive}
q _{Uninterruptible power supplies (UPS)}
q _{Switch-mode and resonant-mode}
power supplies
q _Welding
Advantages
q _{Easy to mount with 1 screw}
(isolated mounting screw hole)
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92773F (7/00)
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