IXSH35N120B Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT

IGBT
IXSH 35N120B
IXST 35N120B
"S" Series - Improved SCSOA Capability
I_C25
V_CES
V_CE(sat)
= 70 A
= 1200 V
= 3.6 V
Symbol
V_CES
V_CGR
V_GES
V
GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
t
SC
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
70
A
35
A
140
A
V_GE = 15 V, T_J = 125°C, R_G = 5 Ω
Clamped inductive load
I_CM = 90
A
@ 0.8 V_CES
T_J = 125°C, V_CE = 720 V; V_GE = 15 V, R_G = 22 Ω
10
µs
P_C
T_C = 25°C
T_J
T_JM
T_stg
M_d
Mounting torque
(TO-247)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
6
g
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 1.0 mA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 V_CES
Note 1
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 25°C
T_J = 125°C
1200
3
T_J = 25°C
T_J = 125°C
V
6V
50 µA
2.5 mA
±100 nA
3.6 V
2.9 V
TO-247 AD (IXSH)
G
C
E
TO-268 ( IXST)
(TAB)
G
E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
l _{Epitaxial Silicon drift region}
- fast switching
- small tail current
l _{MOS gate turn-on for drive simplicity}
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
© 2002 IXYS All rights reserved
98669B (01/02)