IXSH30N60CD1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Short Circuit SOA Capability

High Speed IGBT with Diode
Short Circuit SOA Capability
IXSH 30 N60CD1
IXSK 30 N60CD1
IXST 30 N60CD1
V_CES =
I_C25
=
V_CE(sat) =
t_fi
=
600 V
55 A
2.5 V
70 ns
Preliminary data
TO-247AD
(IXSH)
Symbol
Test Conditions
V
CES
V_CGR
V_GES
V_GEM
I_C25
I
C90
I_CM
SSOA
(RBSOA)
t_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
M
d
Weight
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T
C
= 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_J = 125°C, R_G = 10 W
Clamped inductive load, V = 0.8 V
CL
CES
V_GE= 15 V, V_CE = 360 V, T_J = 125°C
R_G = 33 W, non repetitive
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
55
A
30
A
110
A
I_CM = 60
A
10
ms
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V
CE(sat)
Test Conditions
I_C = 750 mA, V_GE = 0 V
I = 2.5 mA, V = V
C
CE
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
V = 15 V
GE
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600
4
T
J
=
25°C
T_J = 125°C
I =I
C C90
V
7V
200 mA
3 mA
±100 nA
2.5 V
G
C
E
TO-268 (D3)
(IXST)
C
GE
TO-264
(IXSK)
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• High freqeuncy IGBT and anti-
parallel FRED in one package
• New generation HDMOS^TM process
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Surface mountable, high power case
style
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98518A (7/00)
1-2