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IXSH30N60BD1 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Speed IGBT with Diode
High Speed IGBT with Diode
Short Circuit SOA Capability
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
VCES
IC25
VCE(sat)
tfi
= 600 V
= 55 A
= 2.0 V
= 140 ns
Symbol
Test Conditions
Maximum Ratings
VCES
V
CGR
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
VGES
VGEM
Continuous
Transient
I
C25
T
C
= 25°C
IC90
TC = 90°C
I
CM
T
C
= 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, VCL = 0.8 VCES
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 33 W, non repetitive
P
C
T
C
= 25°C
TJ
TJM
T
stg
Md
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
V
600
V
±20
V
±30
V
55
A
30
A
110
A
ICM = 60
A
10
ms
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
Weight
TO-247/TO-268
TO-264
6/4
g
10
g
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
IC = 750 mA, VGE = 0 V
IC = 2.5 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25°C
TJ = 125°C
IC = IC90
IC = IC25
V
7V
200 mA
3 mA
±100 nA
2.0 V
2.7 V
TO-247AD
(IXSH)
G
CE
TO-268 (D3)
(IXST)
G
C
E
TO-264
(IXSK)
G
C
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• Medium freqeuncy IGBT and anti-
parallel FRED in one package
• New generation HDMOSTM process
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Surface mountable, high power case
style
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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