IXSH30N60B2D1 Datasheet, PDF (1/6 Pages) IXYS Corporation – High Speed IGBT with Diode

High Speed IGBT
with Diode
IXSH 30N60B2D1
IXST 30N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
V_CES = 600 V
I_C25 = 48 A
V_CE(sat) = 2.5 V
Symbol
Test Conditions
V_CES
V_CGR
V
GES
V_GEM
I_C25
I_C110
I_F(110)
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_J = 125°C, R_G = 10Ω
Clamped inductive load
t_SC
(SCSOA)
P
C
T_J
T_JM
T_stg
Weight
V_GE = 15 V, V_CE = 360 V, T_J = 125°C
R_G = 10 Ω, non repetitive
T
C
= 25°C
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
48
A
30
A
28
A
90
A
I_CM = 48
A
@ 0.8 V_CES
10
µs
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
6
g
5
g
300
°C
260
°C
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 750 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ± 20 V
I_C = 24A, V_GE = 15 V
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
4.0
7.0 V
150 µA
1 mA
± 100 nA
2.5 V
TO-247 (IXSH)
G
CE
TO-268 (IXST)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
• Low V_CE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99249(10/04)