IXSH25N120AU1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode

IGBT with Diode
IXSH25N120AU1
"S" Series - Improved SCSOA Capability
C
I_C25 = 50 A
V_CES = 1200 V
V_CE(sat) = 4.0 V
G
Symbol
Test Conditions
E
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
V_GES
V_GEM
Continuous
Transient
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_J = 125°C, R_G = 33 W
Clamped inductive load, L = 100 µH
t
sc
P_C
T_J
T_JM
T
STG
M_d
Weight
T
J
=
125ºC,
V
CE
=
720
V;
V
GE
=
15V,
R
G
=
33W
T_C = 25°C
Mounting torque
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
1200
V
1200
V
±20
V
±30
V
50
A
25
A
80
A
I_CM = 50
A
@ 0.8 V_CES
10
µs
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.15/10 Nm/lb-in.
6
g
300
°C
TO-247 AD
G
EC
Features
• High frequency IGBT with guaranteed
short circuit SOA capability.
• IGBT with anti-parallel diode in one
package
• 2^nd generation HDMOS^TM process
Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 4 mA, V_GE = 0 V
I_C = 2.5 mA, V_CE = V_GE
V_CE = 0.8 V_CES , V_GE= 0 V
Note 2
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C unless otherwise specified)
Min. Typ. Max.
1200
V
4
8V
T_J = 25°C
T_J = 125°C
500 mA
8 mA
+ 100 nA
4.0 V
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies
(UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
Advantages
• Saves space (two devices in one
package)
• Easy to mount (isolated mounting
hole)
• Reduces assembly time and cost
• Operates cooler
• Easier to assemble
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
94521C(7/00)
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