IXSH24N60B Datasheet, PDF (1/2 Pages) IXYS Corporation – High Speed IGBT

High Speed IGBT
Short Circuit SOA Capability
IXSH 24N60B
IXST 24N60B
IXSH 24N60BD1
IXST 24N60BD1
V_CES
I_C25
V
CE(sat)
t_{fi typ}
= 600 V
= 48 A
= 2.5 V
= 170 ns
Symbol
Test Conditions
V_CES
V_CGR
V
GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
t_SC
(SCSOA)
P_C
T
J
T_JM
T_stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V=
GE
15
V,
T
J
=
125°C,
R
G
=
33
Ω
Clamped inductive load, V_CC= 0.8 V_CES
V_GE = 15 V, V_CE = 360 V, T_J = 125°C
R_G = 33 Ω, non repetitive
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
(D1)
Maximum Ratings
600
V
600
V
±20
V
±30
V
48
A
24
A
96
A
I = 48
A
CM
@ 0.8 V_CES
10
µs
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BV_CES
V
GE(th)
I_CES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_GE = 0 V
I = 1.5 mA, V = V
C
CE
GE
V_CE = 0.8 • V_CES
T_J = 25°C
V_GE = 0 V
T_J = 125°C
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C
C90 GE
600
3.5
24N60B
24N60BD1
24N60B
24N60BD1
V
6.5 V
25 µA
200 µA
1 mA
2 mA
±100 nA
2.5 V
TO-247 AD (IXSH)
G
C
E
TO-268 (D3) ( IXST)
(TAB)
G
E
(TAB)
G = Gate
E = Emitter
TAB = Collector
Features
z _{International standard packages}
z _{Guaranteed Short Circuit SOA}
capability
z _{Low VCE(sat)}
- for low on-state conduction losses
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Fast Fall Time for switching speeds}
up to 50 kHz
Applications
z _{AC and DC motor speed control}
z _{Uninterruptible power supplies (UPS)}
z _Welding
Advantages
z _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
z _{High power density}
© 2003 IXYS All rights reserved
DS98768B(02/03)